Urciuoli, Damian: search on Z-Library

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1

Experimental evaluation of metallic phase change materials for thermal transient mitigation

Gonzalez-Nino, David, Boteler, Lauren M., Ibitayo, Dimeji, Jankowski, Nicholas R., Urciuoli, Damian, Kierzewski, Iain M., Quintero, Pedro O.

Journal:

International Journal of Heat and Mass Transfer

Year:

2018

Language:

english

File:

PDF, 2.44 MB

english, 2018

2

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Pushpakaran, Bejoy N., Hinojosa, Miguel, Bayne, Stephen B., Veliadis, Victor, Urciuoli, Damian, El-Hinnawy, Nabil, Borodulin, Pavel, Gupta, Shalini, Scozzie, Charles

Journal:

IEEE Transactions on Plasma Science

Year:

2014

Language:

english

File:

PDF, 1.36 MB

english, 2014

3

[IEEE 2010 IEEE Energy Conversion Congress and Exposition (ECCE) - Atlanta, GA, USA (2010.09.12-2010.09.16)] 2010 IEEE Energy Conversion Congress and Exposition - Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Urciuoli, Damian, Green, Ronald, Lelis, Aivars, Ibitayo, Dimeji

Year:

2010

Language:

english

File:

PDF, 1.12 MB

english, 2010

4

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, Miguel, Bayne, Stephen, Veliadis, Victor, Urciuoli, Damian

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 379 KB

english, 2012

5

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

Green, Ronald, Lelis, Aivars, Urciuoli, Damian, Litz, Marc, Carroll, James

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 392 KB

english, 2014

6

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Evaluation of 4H-SiC DMOSFETs for power converter applications

Green, Ronald, Urciuoli, Damian, Ogunniyi, Aderinto, Koebke, Gail, Everhart, Lauren, Ibitayo, Dimeji, Lelis, Aivars, Hull, Brett

Year:

2007

Language:

english

File:

PDF, 326 KB

english, 2007

7

[IEEE amp; Management Symposium (SEMI-THERM) - Santa Clara, CA (2010.02.21-2010.02.25)] 2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) - Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module

Boteler, Lauren, Urciuoli, Damian, Ovrebo, Gregory, Ibitayo, Dimeji, Green, Ronald

Year:

2010

Language:

english

File:

PDF, 1.56 MB

english, 2010

8

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

Pushpakaran, Bejoy N., Hinojosa, Miguel, Bayne, Stephen B., Veliadis, Victor, Urciuoli, Damian, El-Hinnawy, Nabil, Borodulin, Pavel, Gupta, Shalini, Scozzie, Charles

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 361 KB

english, 2013

9

Nanocrystalline material development for high-power inductors

Long, Jianguo, McHenry, Mike, Urciuoli, Damian P., Keylin, Vladimir, Huth, Joe, Salem, Thomas E.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 543 KB

english, 2008

10

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Lawson, Kevin, Alvarez, G., Bayne, S. B., Veliadis, Victor, Ha, H.C., Urciuoli, Damian, Scozzie, C.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 619 KB

english, 2012

11

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Veliadis, Victor, Hearne, Harold, Chang, W., Caldwell, Joshua D., Stewart, Eric J., Snook, Megan, Howell, R.S., Urciuoli, Damian, Lelis, Aivars J., Scozzie, C.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 630 KB

english, 2012

12

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Veliadis, Victor, Urciuoli, Damian, Ha, H.C., Hearne, Harold, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 554 KB

english, 2011

13

[IEEE 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP) - Delft, Netherlands (2017.4.5-2017.4.7)] 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP) - Stacked power module with integrated thermal management

Boteler, Lauren M., Niemann, Valerie A., Urciuoli, Damian P., Miner, Steven M.

Year:

2017

File:

PDF, 639 KB

2017

14

Short-Circuit Robustness Testing of SiC MOSFETs

Green, Ronald, Urciuoli, Damian P., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 503 KB

english, 2017

15

[IEEE 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA) - Albuquerque, NM (2017.10.30-2017.11.1)] 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - SiC MOSFETs designed and evaluated for linear mode operation

O'Brien, Heather, Ogunniyi, Aderinto, Urciuoli, Damian, Zhang, Qingchun Jon, Hull, Brett

Year:

2017

Language:

english

File:

PDF, 342 KB

english, 2017

16

Short-Circuit Robustness of SiC Trench MOSFETs

Green, Ronald, Urciuoli, Damian, Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2018

File:

PDF, 1.19 MB

2018

17

[IEEE 2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC) - Jackson, WY, USA (2018.6.3-2018.6.7)] 2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC) - Development of a Compact, 240-kV, 10-J Impulse Generator for Mobile Platforms

Hinojosa, Miguel, Urciuoli, Damian, Litz, Marc, Schroen, Erik, Tesny, Neal, Tipton, Wes

Year:

2018

File:

PDF, 1.50 MB

2018